Three-Dimensional Memory Device and Method

ABSTRACT

A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.17/018,114, filed on Sep. 11, 2020, entitled “Three-Dimensional MemoryDevice and Method,” which claims the benefit of U.S. ProvisionalApplication No. 63/052,505, filed on Jul. 16, 2020, which applicationsare hereby incorporated herein by reference.

BACKGROUND

Semiconductor memories are used in integrated circuits for electronicapplications, including radios, televisions, cell phones, and personalcomputing devices, as examples. Semiconductor memories include two majorcategories. One is volatile memories; the other is non-volatilememories. Volatile memories include random access memory (RAM), whichcan be further divided into two sub-categories, static random accessmemory (SRAM) and dynamic random access memory (DRAM). Both SRAM andDRAM are volatile because they will lose the information they store whenthey are not powered.

On the other hand, non-volatile memories can keep data stored on them.One type of non-volatile semiconductor memory is ferroelectric randomaccess memory (FeRAM, or FRAM). Advantages of FeRAM include its fastwrite/read speed and small size.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a block diagram of a random-access memory, in accordance withsome embodiments.

FIGS. 2A and 2B are various views of a memory array, in accordance withsome embodiments.

FIGS. 3A through 15B are various views of intermediate stages in themanufacturing of a memory array, in accordance with some embodiments.

FIGS. 16A and 16B are various views of a memory array, in accordancewith some other embodiments.

FIGS. 17A and 17B are various views of a memory array, in accordancewith some other embodiments.

FIGS. 18A and 18B are various views of a memory array, in accordancewith some other embodiments.

FIGS. 19A through 19B are various views of intermediate stages in themanufacturing of a memory array, in accordance with some otherembodiments.

FIGS. 20A through 22B are various views of intermediate stages in themanufacturing of a memory array, in accordance with some otherembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

According to various embodiments, word lines for a memory array areformed by a multiple-patterning process, in which first portions of theword lines and a first subset of the transistors for the memory arrayare formed in a first patterning process, and in which second portionsof the word lines and a second subset of the transistors for the memoryarray are subsequently formed in a second patterning process. The aspectratio of the columns of the memory array may thus be improved whiletwisting or collapsing of the features during formation is avoided.

FIG. 1 is a block diagram of a random-access memory 50, in accordancewith some embodiments. The random-access memory 50 includes a memoryarray 52, a row decoder 54, and a column decoder 56. The memory array52, the row decoder 54, and the column decoder 56 may each be part of asame semiconductor die, or may be parts of different semiconductor dies.For example, the memory array 52 can be part of a first semiconductordie, while the row decoder 54 and the column decoder 56 can be part of asecond semiconductor die.

The memory array 52 includes memory cells 58, word lines 62, and bitlines 64. The memory cells 58 are arranged in rows and columns. The wordlines 62 and the bit lines 64 are electrically connected to the memorycells 58. The word lines 62 are conductive lines that extend along therows of the memory cells 58. The bit lines 64 are conductive lines thatextend along the columns of the memory cells 58.

The row decoder 54 may be, e.g., a static CMOS decoder, a pseudo-NMOSdecoder, or the like. During operation, the row decoder 54 selectsdesired memory cells 58 in a row of the memory array 52 by activatingthe word line 62 for the row. The column decoder 56 may be, e.g., astatic CMOS decoder, a pseudo-NMOS decoder, or the like, and may includewriter drivers, sense amplifiers, combinations thereof, or the like.During operation, the column decoder 56 selects bit lines 64 for thedesired memory cells 58 from columns of the memory array 52 in theselected row, and reads data from or writes data to the selected memorycells 58 with the bit lines 64.

FIGS. 2A and 2B are various views of a memory array 52, in accordancewith some embodiments. FIG. 2A is a circuit diagram of the memory array52. FIG. 2B is a three-dimensional view of a portion of the memory array52.

The memory array 52 is a flash memory array, such as a NOR flash memoryarray,; a high speed memory array such as a DRAM or an SRAM; anon-volatile memory such as RRAM or MRAM, or the like. Each of thememory cells 58 is a flash memory cell that includes a thin filmtransistor (TFT) 68. The gate of each TFT 68 is electrically connectedto a respective word line 62, a first source/drain region of each TFT 68is electrically connected to a respective bit line 64, and a secondsource/drain region of each TFT 68 is electrically connected to arespective source line 66 (which are electrically connected to ground).The memory cells 58 in a same row of the memory array 52 share a commonword line 62 while the memory cells in a same column of the memory array52 share a common bit line 64 and a common source line 66.

The memory array 52 includes multiple arranged conductive lines (e.g.,the word lines 62) with dielectric layers 72 located between adjacentones of the word lines 62. The word lines 62 extend in a first directionDi that is parallel to a major surface of an underlying substrate (notshown in FIG. 2B, but discussed in greater detail below with respect toFIGS. 3A through 21B). The word lines 62 may have a staircasearrangement such that lower word lines 62 are longer than and extendlaterally past endpoints of upper word lines 62. For example, in FIG.2B, multiple, stacked layers of word lines 62 are illustrated withtopmost word lines 62A being the shortest lines and bottommost wordlines 62B being the longest lines. Respective lengths of the word lines62 increases in a direction extending towards the underlying substrate.In this manner, a portion of each word line 62 may be accessible fromabove the memory array 52, so that conductive contacts may be formed toan exposed portion of each word line 62.

The memory array 52 further includes multiple arranged conductive linessuch as the bit lines 64 and the source lines 66. The bit lines 64 andthe source lines 66 extend in a second direction D₂ that isperpendicular to the first direction D₁ and the major surface of theunderlying substrate. A dielectric layer 74 is disposed between andisolates adjacent ones of the bit lines 64 and the source lines 66. Theboundaries of each memory cell 58 are defined by pairs of the bit lines64 and the source lines 66 along with an intersecting word line 62. Adielectric plug 76 is disposed between and isolates adjacent pairs ofthe bit lines 64 and the source lines 66. Although FIGS. 2A and 2Billustrate a particular placement of the bit lines 64 relative to thesource lines 66, it should be appreciated that the placement of the bitlines 64 and the source lines 66 may be flipped in other embodiments.

The memory array 52 further includes ferroelectric strips 84 andsemiconductor strips 82. The ferroelectric strips 84 are in contact withthe word lines 62. The semiconductor strips 82 are disposed between theferroelectric strips 84 and the dielectric layer 74.

The semiconductor strips 82 provide channel regions for the TFTs 68 ofthe memory cells 58. For example, when an appropriate voltage (e.g.,higher than a respective threshold voltage (V_(th)) of a correspondingTFT 68) is applied through a corresponding word line 62, a region of asemiconductor strip 82 that intersects the word line 62 may allowcurrent to flow from the bit line 64 to the source lines 66 (e.g., inthe direction D₁).

The ferroelectric strips 84 are data-storing layers that may bepolarized in one of two different directions by applying an appropriatevoltage differential across the ferroelectric strips 84. Depending on apolarization direction of a particular region of a ferroelectric strip84, a threshold voltage of a corresponding TFT 68 varies and a digitalvalue (e.g., 0 or 1) can be stored. For example, when a region offerroelectric strip 84 has a first electrical polarization direction,the corresponding TFT 68 may have a relatively low threshold voltage,and when the region of the ferroelectric strip 84 has a secondelectrical polarization direction, the corresponding TFT 68 may have arelatively high threshold voltage. The difference between the twothreshold voltages may be referred to as the threshold voltage shift. Alarger threshold voltage shift makes it easier (e.g., less error prone)to read the digital value stored in the corresponding memory cell 58.Accordingly, the memory array 52 may also be referred to as aferroelectric random access memory (FERAM) array.

To perform a write operation on a particular memory cell 58, a writevoltage is applied across a region of the ferroelectric strip 84corresponding to the memory cell 58. The write voltage can be applied,for example, by applying appropriate voltages to the word line 62, thebit line 64, and the source line 66 corresponding to the memory cell 58.By applying the write voltage across the region of the ferroelectricstrip 84, a polarization direction of the region of the ferroelectricstrip 84 can be changed. As a result, the corresponding thresholdvoltage of the corresponding TFT 68 can be switched from a low thresholdvoltage to a high threshold voltage (or vice versa), so that a digitalvalue can be stored in the memory cell 58. Because the word lines 62 andthe bit lines 64 intersect in the memory array 52, individual memorycells 58 may be selected and written to.

To perform a read operation on a particular memory cell 58, a readvoltage (a voltage between the low and high threshold voltages) isapplied to the word line 62 corresponding to the memory cell 58.Depending on the polarization direction of the corresponding region ofthe ferroelectric strip 84, the TFT 68 of the memory cell 58 may or maynot be turned on. As a result, the bit line 64 may or may not bedischarged (e.g., to ground) through the source line 66, so that thedigital value stored in the memory cell 58 can be determined. Becausethe word lines 62 and the bit lines 64 intersect in the memory array 52,individual memory cells 58 may be selected and read from.

FIGS. 3A through 15B are various views of intermediate stages in themanufacturing of a memory array 52, in accordance with some embodiments.A portion of the memory array 52 is illustrated. Some features, such asthe staircase arrangement of the word lines (see FIG. 2B), are not shownfor clarity of illustration. FIGS. 3A, 4A, 5A, 6A, 7A, 8A, 9A, 10A, 11A,12A, 13A, 14A and 15A are three-dimensional views of the memory array52. FIGS. 3B, 4B, 5B, 6B, 7B, 8B, 9B, 10B, 11B, 12B, 13B, 14B and 15Bare a cross-sectional views shown along reference cross-section B-B inFIG. 13A.

In FIGS. 3A and 3B, a substrate 102 is provided. The substrate 102 maybe a semiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like, which may bedoped (e.g., with a p-type or an n-type dopant) or undoped. Thesubstrate 102 may be a wafer, such as a silicon wafer. Generally, an SOIsubstrate is a layer of a semiconductor material formed on an insulatorlayer. The insulator layer may be, for example, a buried oxide (BOX)layer, a silicon oxide layer, or the like. The insulator layer isprovided on a substrate, typically a silicon or glass substrate. Othersubstrates, such as a multilayered or gradient substrate may also beused. In some embodiments, the semiconductor material of the substrate102 may include silicon; germanium; a compound semiconductor includingsilicon carbide, gallium arsenide, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductorincluding silicon germanium, gallium arsenide phosphide, aluminum indiumarsenide, aluminum gallium arsenide, gallium indium arsenide, galliumindium phosphide, and/or gallium indium arsenide phosphide; orcombinations thereof. The substrate 102 may include a dielectricmaterial. For example, the substrate 102 may be a dielectric substrate,or may include a dielectric layer on a semiconductor substrate.Acceptable dielectric materials for dielectric substrates include oxidessuch as silicon oxide; nitrides such as silicon nitride; carbides suchas silicon carbide; the like; or combinations thereof such as siliconoxynitride, silicon oxycarbide, silicon carbonitride, or the like. Insome embodiments, the substrate 102 is formed of silicon carbide.

A multilayer stack 104 is formed over the substrate 102. The multilayerstack 104 includes alternating first dielectric layers 104A and seconddielectric layers 104B. The first dielectric layers 104A are formed of afirst dielectric material, and the second dielectric layers 104B areformed of a second dielectric material. The dielectric materials mayeach be selected from the candidate dielectric materials of thesubstrate 102. In some particular embodiments, the first dielectriclayers 104A may be any suitable material as long as the material of thefirst dielectric layers 104A etches at a slower etch rate than thematerial of the second dielectric layers 104B during removal of thematerial of the second dielectric layers 104B in subsequent processing(described further below).

In the illustrated embodiment, the multilayer stack 104 includes fivelayers of the first dielectric layers 104A and four layers of the seconddielectric layers 104B. It should be appreciated that the multilayerstack 104 may include any number of the first dielectric layers 104A andthe second dielectric layers 104B.

The multilayer stack 104 will be patterned in subsequent processing. Assuch, the dielectric materials of the first dielectric layers 104A andthe second dielectric layers 104B both have a high etching selectivityfrom the etching of the substrate 102. The patterned first dielectriclayers 104A will be used to isolate subsequently formed TFTs. Thepatterned second dielectric layers 104B are sacrificial layers (or dummylayers), which will be removed in subsequent processing and replacedwith word lines for the TFTs. As such, the second dielectric material ofthe second dielectric layers 104B also has a high etching selectivityfrom the etching of the first dielectric material of the firstdielectric layers 104A. In embodiments where the substrate 102 is formedof silicon carbide, the first dielectric layers 104A can be formed of anoxide such as silicon oxide, and the second dielectric layers 104B canbe formed of a nitride such as silicon nitride. Other combinations ofdielectric materials having acceptable etching selectivity from oneanother may also be used.

Each layer of the multilayer stack 104 may be formed by an acceptabledeposition process such as chemical vapor deposition (CVD), atomic layerdeposition (ALD), or the like. A thickness of each of the layers may bein the range of about 15 nm to about 90 nm. In some embodiments, thefirst dielectric layers 104A are formed to a different thickness thanthe second dielectric layers 104B. For example, the first dielectriclayers 104A can be formed to a first thickness T₁ and the seconddielectric layers 104B can be formed to a second thickness T₂, with thesecond thickness T₂ being from about 0% to about 100% [greater/less]less than the first thickness T₁. Additionally, the multilayer stack 104may have any suitable number of pairs of the first dielectric layers104A and the second dielectric layers 104B, such as more than 20 pairsand the multilayer stack 104 can have an overall height H₁ in the rangeof about 1000 nm to about 10000 nm (such as about 2000 nm).

As will be discussed in greater detail below, FIGS. 4A through 14Billustrate a process in which trenches are patterned in the multilayerstack 104 and TFTs are formed in the trenches. Specifically, amultiple-patterning process is used to form the TFTs. Themultiple-patterning process may be a double patterning process, aquadruple patterning process, or the like. FIGS. 4A through 14Billustrate a double patterning process. In a double patterning process,first trenches 106 (see FIGS. 4A and 4B) are patterned in the multilayerstack 104 with a first etching process, and components for a firstsubset of the TFTs are formed in the first trenches 106. Second trenches120 (see FIGS. 8A and 8B) are then patterned in the multilayer stack 104with a second etching process, and a second subset of the TFTs areformed in the second trenches 120. Forming the TFTs with amultiple-patterning process allows each patterning process to beperformed with a low pattern density, which can help reduce defectswhile still allowing the memory array 52 to have sufficient memory celldensity, while also helping to prevent the aspect ratio from becomingtoo high and causing problems with structural instability.

In FIGS. 4A and 4B, first trenches 106 are formed in the multilayerstack 104. In the illustrated embodiment, the first trenches 106 extendthrough the multilayer stack 104 and expose the substrate 102. Inanother embodiment, the first trenches 106 extend through some but notall layers of the multilayer stack 104. The first trenches 106 may beformed using acceptable photolithography and etching techniques, such aswith an etching process that is selective to the multilayer stack 104(e.g., etches the dielectric materials of the first dielectric layers104A and the second dielectric layers 104B at a faster rate than thematerial of the substrate 102). The etching may be any acceptable etchprocess, such as a reactive ion etch (RIE), neutral beam etch (NBE), thelike, or a combination thereof. The etching may be anisotropic. Inembodiments where the substrate 102 is formed of silicon carbide, thefirst dielectric layers 104A are formed of silicon oxide, and the seconddielectric layers 104B are formed of silicon nitride, the first trenches106 can be formed by a dry etch using a fluorine-based gas (e.g., C₄F₆)mixed with hydrogen (H₂) or oxygen (O₂) gas.

A portion of the multilayer stack 104 is disposed between each pair ofthe first trenches 106. Each portion of the multilayer stack 104 canhave a width W₁ that is about three times larger than the desired finalwidth of the word line, such as being in the range of about 50 nm toabout 500 nm (such as about 240 nm), and has the height H₁ discussedwith respect to FIGS. 3A and 3B. Further, each portion of the multilayerstack 104 is separated by a separation distance S₁, which can be in therange of about 50 nm to about 200 nm (such as about 80 nm). The aspectratio (AR) of each portion of the multilayer stack 104 is the ratio ofthe height H₁ to the width of the narrowest feature of the portion ofthe multilayer stack 104, which is the width W₁ at this step ofprocessing. In accordance with some embodiment, when the first trenches106 are formed, the aspect ratio of each portion of the multilayer stack104 is in the range of about 5 to about 15. Forming each portion of themultilayer stack 104 with an aspect ratio of less than about 5 may notallow the memory array 52 to have sufficient memory cell density.Forming each portion of the multilayer stack 104 with an aspect ratio ofgreater than about 15 may cause twisting or collapsing of the multilayerstack 104 in subsequent processing.

In FIGS. 5A and 5B, the first trenches 106 are expanded to form firstsidewall recesses 110. Specifically, portions of the sidewalls of thesecond dielectric layers 104B exposed by the first trenches 106 arerecessed to form the first sidewall recesses 110. Although sidewalls ofthe second dielectric layers 104B are illustrated as being straight, thesidewalls may be concave or convex. The first sidewall recesses 110 maybe formed by an acceptable etching process, such as one that isselective to the material of the second dielectric layers 104B (e.g.,selectively etches the material of the second dielectric layers 104B ata faster rate than the materials of the first dielectric layers 104A andthe substrate 102). The etching may be isotropic. In embodiments wherethe substrate 102 is formed of silicon carbide, the first dielectriclayers 104A are formed of silicon oxide, and the second dielectriclayers 104B are formed of silicon nitride, the first trenches 106 can beexpanded by a wet etch using phosphoric acid (H₃PO₄). However, anysuitable etching process, such as a dry selective etch, may also beutilized.

After formation, the first sidewall recesses 110 have a depth D₃extending past the sidewalls of the first dielectric layers 104A. Timedetch processes may be used to stop the etching of the first sidewallrecesses 110 after the first sidewall recesses 110 reach a desired depthD₃. For example, when phosphoric acid is used to etch the seconddielectric layers 104B, the etching may be performed for a durationsufficient to cause the first sidewall recesses 110 to have a depth D₃in the range of about 10 nm to about 60 nm (such as about 40 nm).Forming the first sidewall recesses 110 reduces the width of the seconddielectric layers 104B. Continuing the previous example, the seconddielectric layers 104B can have a width W₂ in the range of about 50 nmto about 450 nm (such as about 160 nm) after the etching. As notedabove, the aspect ratio (AR) of each portion of the multilayer stack 104is the ratio of the height H₁ to the width of the narrowest feature ofthe portion of the multilayer stack 104, which is the width W₂ at thisstep of processing. Forming the first sidewall recesses 110 thusincreases the aspect ratio of each portion of the multilayer stack 104.In accordance with some embodiments, after forming the first sidewallrecesses 110, the aspect ratio of each portion of the multilayer stack104 remains in the range discussed above, e.g., the range of about 5 toabout 15. The advantages of such an aspect ratio (discussed above) maythus still be achieved.

In FIGS. 6A and 6B, first conductive features 112A are formed in thefirst sidewall recesses 110, thus completing a process for replacingfirst portions of the second dielectric layers 104B. The firstconductive features 112A may each comprise one or more layers, such asglue layers, barrier layers, diffusion layers, and fill layers, and thelike. In some embodiments, the first conductive features 112A eachinclude a glue layer 112A_(G) and a main layer 112A_(M), although inother embodiments the glue layer 112A_(G) may be omitted. Each gluelayer 112A_(G) extends along three sides (e.g., the top surface, asidewall, and the bottom surface) of the material of a correspondingmain layer 112A_(M) located within the first sidewall recesses 110. Theglue layers 112A_(G) are formed of a first conductive material, such astitanium, titanium nitride, tantalum, tantalum nitride, molybdenum,ruthenium, rhodium, hafnium, iridium, niobium, rhenium, tungsten,combinations of these, oxides of these, or the like. The main layers112A_(M) may be formed of a second conductive material, such as a metal,such as tungsten, cobalt, aluminum, nickel, copper, silver, gold,molybdenum, ruthenium, molybdenum nitride, alloys thereof, or the like.The material of the glue layers 112A_(G) is one that has good adhesionto the material of the first dielectric layers 104A, and the material ofthe main layers 112A_(M) is one that has good adhesion to the materialof the glue layers 112A_(G). In embodiments where the first dielectriclayers 104A are formed of an oxide such as silicon oxide, the gluelayers 112A_(G) can be formed of titanium nitride and the main layers112A_(M) can be formed of tungsten. The glue layers 112A_(G) and mainlayers 112A_(M) may each be formed by an acceptable deposition processsuch as chemical vapor deposition (CVD), atomic layer deposition (ALD),or the like.

In FIGS. 7A and 7B, a remainder of the first trenches 106 are filledand/or overfilled with a first dielectric material 108 without etchingback the material of the first conductive features 112A. In anembodiment the first dielectric material 108 may be a material such assilicon oxide, silicon nitride, silicon oxynitride, combinations ofthese, or the like, deposited using a chemical vapor deposition process,atomic layer deposition process, a physical vapor deposition process,combinations of these, or the like. In some embodiments the firstdielectric material 108 may be a similar material as the material of thefirst dielectric layers 104A, although in other embodiments thematerials may be different. Any suitable material and method ofdeposition may be utilized.

Once the dielectric material 108 has been deposited in order to filland/or overfill the first trenches 106, the first dielectric material108 may be planarized to removed excess material outside of the firsttrenches 106. In an embodiment the first dielectric material 108 may beplanarized using, e.g., a chemical mechanical planarization (CMP)process. However, any suitable planarization process, such as a grindingprocess, may also be utilized.

In an embodiment the first dielectric material 108 is planarized to beplanar with the first dielectric layers 104A. As such, portions of thefirst conductive features 112A that are located outside of the firsttrenches 106 are also removed and planarized to be planar with the firstdielectric layers 104A and the first dielectric material 108. As such, afirst surface that is planar comprises the first dielectric layers 104A,the first conductive features 112A, and the first dielectric material108.

In FIGS. 8A and 8B, second trenches 120 are formed in the multilayerstack 104. In the illustrated embodiment, the second trenches 120 extendthrough the multilayer stack 104 and expose the substrate 102. Inanother embodiment, the second trenches 120 extend through some but notall layers of the multilayer stack 104. The second trenches 120 may beformed using acceptable photolithography and etching techniques, such aswith an etching process that is selective to the multilayer stack 104(e.g., etches the dielectric materials of the first dielectric layers104A and the second dielectric layers 104B at a faster rate than thematerial of the substrate 102). The etching may be any acceptable etchprocess, and in some embodiments, may be similar to the etch used toform the first trenches 106 discussed with respect to FIGS. 4A and 4B.

A portion of the multilayer stack 104 is disposed between each secondtrench 120 and first trench 106. Each portion of the multilayer stack104 can have a width W₃ in the range of about 50 nm to about 500 nm, andhas the height H₁ discussed with respect to FIGS. 3A and 3B. Further,each portion of the multilayer stack 104 is separated by a separationdistance S₂, which can be in the range of about 50 nm to about 200 nm.The aspect ratio (AR) of each portion of the multilayer stack 104 is theratio of the height H₁ to the width of the narrowest feature of theportion of the multilayer stack 104, which is the width W₃ at this stepof processing. In accordance with some embodiments, when the secondtrenches 120 are formed, the aspect ratio of each portion of themultilayer stack 104 is in the range of about 5 to about 15. Formingeach portion of the multilayer stack 104 with an aspect ratio of lessthan about 5 may not allow the memory array 52 to have sufficient memorycell density. Forming each portion of the multilayer stack 104 with anaspect ratio of greater than about 15 may cause twisting or collapsingof the multilayer stack 104 in subsequent processing.

In FIGS. 9A and 9B, the second trenches 120 are expanded to form secondsidewall recesses 124. Specifically, the remaining portions of thesecond dielectric layers 104B are removed to form the second sidewallrecesses 124. The second sidewall recesses 124 thus expose portions ofthe first conductive features 112A, e.g., the glue layers 112A_(G). Thesecond sidewall recesses 124 may be formed by an acceptable etchingprocess, such as one that is selective to the material of the seconddielectric layers 104B (e.g., selectively etches the material of thesecond dielectric layers 104B at a faster rate than the materials of thefirst dielectric layers 104A and the substrate 102). The etching may beany acceptable etch process, and in some embodiments, may be similar tothe etch used to form the first sidewall recesses 110 discussed withrespect to FIGS. 5A and 5B. After formation, the second sidewallrecesses 124 have a depth D₄ extending past the sidewalls of the firstdielectric layers 104A. In some embodiments, the depth D₄ is similar tothe depth D₃ discussed with respect to FIGS. 5A and 5B. In anotherembodiment, the depth D₄ is different from (e.g., greater than or lessthan) the depth D₃ discussed with respect to FIGS. 5A and 5B.

However, by first forming the first conductive features 112A and thesecond dielectric material 122 prior to the etching of the secondtrenches 120 and the formation of the second sidewall recesses 124, thefirst conductive features 112A are present during the etching of thesecond trenches 120 and the second sidewall recesses 124. As such, theunremoved first conductive features 112A and the second dielectricmaterial 122 can work as a strut to provide structural support duringthe high stress release process. The extra support allows problems thatcan occur during the removal process (e.g., word line wiggling or wordline collapse) to be avoided.

In FIGS. 10A and 10B, second conductive features 112B are formed in thesecond sidewall recesses 124, thus completing a process for replacingsecond portions of the second dielectric layers 104B. The secondconductive features 112B may be formed of materials that are selectedfrom the same group of candidate materials of the first conductivefeatures 112A, and may be formed using methods that are selected fromthe same group of candidate methods for forming the materials of thefirst conductive features 112A. The first conductive features 112A andthe second conductive features 112B may be formed from the samematerial, or may include different materials. In some embodiments, thesecond conductive features 112B each include a glue layer 112B_(G) and amain layer 112B_(M), while in other embodiments the glue layer 112B_(G)may be omitted. The glue layers 112B_(G) and the main layers 112B_(M) ofthe second conductive features 112B can have similar thicknesses as theglue layers 112A_(G) and the main layers 112A_(M) of the firstconductive features 112A, respectively. In some embodiments, the gluelayers 112A_(G) and the glue layers 112B_(G) are formed of similarmaterials, in which case the glue layers 112A_(G) and the glue layers112B_(G) may merge during formation such that no discernable interfacesexist between them. In another embodiment (discussed further below), theglue layers 112A_(G) and the glue layers 112B_(G) are formed ofdifferent materials, in which case the glue layers 112A_(G) and the gluelayers 112B_(G) may not merge during formation such that discernableinterfaces exist between them.

The first conductive features 112A and the second conductive features112B are collectively referred to as word lines 112 of the memory array52. Adjacent pairs of the first conductive features 112A and the secondconductive features 112B are in physical contact with one another andare electrically coupled to one another. Thus, each pair of a firstconductive feature 112A and a second conductive feature 112B functionsas a single word line 112.

FIGS. 10A-10B additionally illustrate that, once the second conductivefeatures 112B have been deposited into the second trenches 120, andbefore any etch back of the second conductive features 112B, a seconddielectric material 122 is deposited over the second conductive features112B in order to fill and/or overfill the remainder of the secondtrenches 120. In an embodiment the second dielectric material 122 may amaterial similar to the material of the first dielectric material 108deposited within the first trenches 106 and may also be similar to thefirst dielectric layers 104A, and may be deposited in a similar manneras the material of the first dielectric material 108. However, anysuitable material and any suitable method of deposition may be utilized.

Once the second dielectric material 122 has been deposited to filland/or overfill the second trenches 120, the second dielectric material122 may be planarized in order to remove excess material from outside ofthe second trenches 120. In an embodiment the second dielectric material122 may be planarized using, e.g., a chemical mechanical planarizationprocess, although any suitable process may be utilized. Additionally,the planarization process may also remove any material of the secondconductive features 112B that are located outside of the second trenches120 so that a planar surface comprising the first dielectric layer 104A,the first conductive features 112A, the second conductive features 112B,the first dielectric material 108, and the second dielectric material122 is formed.

FIGS. 11A-11B illustrate a removal of a top layer of the firstdielectric layers 104A (the exposed first dielectric layer 104A) alongwith the first dielectric material 108 within the first trenches 106 andthe second dielectric material 122 in the second trenches 120. In anembodiment the removal may be performed using one or more chemical dryetching processes, wet etching processes, combinations of these, or thelike. For example, in embodiments in which the material of the firstdielectric layers 104A are the same as the materials of the firstdielectric material 108 and the second dielectric material 122, a singleetching process using an etchant that is selective to the material ofthe first dielectric layers 104A, the first dielectric material 108, andthe second dielectric material 122 may be used. In other embodiments inwhich the materials of the first dielectric layers 104A, the firstdielectric material 108, and the second dielectric material 122 aredifferent, multiple etching processes may be utilized in order tosequentially remove the different materials. Any suitable removalprocess may be utilized.

Additionally, as can most clearly be seen in FIG. 11B, the removal ofthe top most first dielectric layer 104A leaves behind the firstconductive features 112A and the second conductive features 112B (whichfeatures have merged into a single conductive structure) to have a“U”-shaped structure with sidewalls that comprise the first conductivefeatures 112A and the second conductive features 112B. As such, theremaining portions of the first conductive features 112A and the secondconductive features 112B form an “H”-shaped structure (highlighted inFIG. 11B by the dashed circle labeled 126), wherein the glue layer 112Agand the glue layer 112Bg are located between the remaining portions ofthe first conductive features 112A and the second conductive features112B.

FIGS. 12A-12B illustrate an etch back process in order to remove excessportions of the first conductive features 112A and the second conductivefeatures 112B and to expose the next first dielectric layer 104A. In anembodiment the etch back process may be performed using, e.g., ananisotropic etching process, such as a reactive ion etch. However, anysuitable etching process may be utilized.

In an embodiment the etch back process is performed until the materialof the first conductive features 112A and the second conductive features112B that are located within the first trenches 106 and the secondtrenches 120 but which are not located in either the first sidewallrecesses 110 and the second sidewall recesses 124 and not covered by thenext first dielectric layer 104A have been removed. As such, theremaining material of the first conductive features 112A and the secondconductive features 112B has a similar width as the remaining portion ofthe second dielectric layers 104B (e.g., 80 nm). However, any suitabledimension may be utilized.

FIGS. 13A-13B illustrate TFT film stacks are formed in the firsttrenches 106 and the second trenches 120. Specifically, twoferroelectric strips 114, a semiconductor strip 116, and a dielectriclayer 118 are formed in each of the first trenches 106 and the secondtrenches 120. In this embodiment, no other layers are formed in thefirst trenches 106 and the second trenches 120. In another embodiment(discussed further below) additional layers are formed in the firsttrenches 106 and the second trenches 120.

The ferroelectric strips 114 are data storage strips formed of anacceptable ferroelectric material for storing digital values, such ashafnium zirconium oxide (HfZrO); zirconium oxide (ZrO); hafnium oxide(HfO) doped with lanthanum (La), silicon (Si), aluminum (Al), or thelike; undoped hafnium oxide (HfO); or the like. The material of theferroelectric strips 114 may be formed by an acceptable depositionprocess such as ALD, CVD, physical vapor deposition (PVD), or the like.

The semiconductor strips 116 are formed of an acceptable semiconductormaterial for providing channel regions of TFTs, such as indium galliumzinc oxide (IGZO), indium tin oxide (ITO), indium gallium zinc tin oxide(IGZTO), zinc oxide (ZnO), polysilicon, amorphous silicon, or the like.The material of the semiconductor strips 116 may be formed by anacceptable deposition process such as ALD, CVD, PVD, or the like.

The dielectric layers 118 are formed of a dielectric material.Acceptable dielectric materials include oxides such as silicon oxide oraluminum oxide; nitrides such as silicon nitride; carbides such assilicon carbide; the like; or combinations thereof such as siliconoxynitride, silicon oxycarbide, silicon carbonitride, or the like. Thematerial of the dielectric layers 118 may be formed by an acceptabledeposition process such as ALD, CVD, flowable CVD (FCVD), or the like.

The ferroelectric strips 114, the semiconductor strips 116, and thedielectric layers 118 may be formed by a combination of deposition,etching, and planarization. For example, a ferroelectric layer can beconformally deposited on the multilayer stack 104 and in the firsttrenches 106 and the second trenches 120 (e.g., on sidewalls of thefirst conductive features 112A and sidewalls of the first dielectriclayers 104A). A semiconductor layer can then be conformally deposited onthe ferroelectric layer. The semiconductor layer can then beanisotropically etched to remove horizontal portions of thesemiconductor layer, thus exposing the ferroelectric layer. A dielectriclayer can then be conformally deposited on the remaining verticalportions of the semiconductor layer and the exposed portions of theferroelectric layer. A planarization process is then applied to thevarious layers to remove excess materials over the multilayer stack 104.The planarization process may be a chemical mechanical polish (CMP), anetch-back process, combinations thereof, or the like. The portions ofthe ferroelectric layer, the semiconductor layer, and the dielectriclayer remaining in the first trenches 106 form the ferroelectric strips114, the semiconductor strips 116, and the dielectric layers 118,respectively. The planarization process exposes the multilayer stack 104such that top surfaces of the multilayer stack 104, the ferroelectricstrips 114, the semiconductor strips 116, and the dielectric layers 118are coplanar (within process variations) after the planarizationprocess.

In FIGS. 14A and 14B, dielectric plugs 132 are formed through thedielectric layers 118 and the semiconductor strips 116. The dielectricplugs 132 are isolation columns that will be disposed between adjacentTFTs, and will physically and electrically separate the adjacent TFTs.In the illustrated embodiment, the dielectric plugs 132 do not extendthrough the ferroelectric strips 114. Different regions of theferroelectric strips 114 may be independently polarized, and thus theferroelectric strips 114 can function to store values even when adjacentregions are not physically and electrically separated. In anotherembodiment, the dielectric plugs 132 are also formed through theferroelectric strips 114. The dielectric plugs 132 further extendthrough the first dielectric layers 104A.

As an example to form the dielectric plugs 132, openings for thedielectric plugs 132 can be formed through the dielectric layers 118 andthe semiconductor strips 116. The openings may be formed usingacceptable photolithography and etching techniques. One or moredielectric material(s) are then formed in the openings. Acceptabledielectric materials include oxides such as silicon oxide; nitrides suchas silicon nitride; carbides such as silicon carbide; the like; orcombinations thereof such as silicon oxynitride, silicon oxycarbide,silicon carbonitride, or the like. The dielectric material(s) may beformed by an acceptable deposition process such as ALD, CVD, or thelike. In some embodiments, silicon oxide or silicon nitride is depositedin the openings. A planarization process is then applied to the variouslayers to remove excess dielectric material(s) over the remainingtopmost first dielectric layer 104A. The planarization process may be achemical mechanical polish (CMP), an etch-back process, combinationsthereof, or the like. The remaining dielectric material(s) form thedielectric plugs 132 in the openings.

FIGS. 14A and 14B additionally illustrate that bit lines 134 and sourcelines 136 are formed through the dielectric layers 118. The bit lines134 and the source lines 136 further extend through the first dielectriclayers 104A. The bit lines 134 and the source lines 136 act assource/drain regions of the TFTs. The bit lines 134 and the source lines136 are conductive columns that are formed in pairs, with eachsemiconductor strip 116 contacting a corresponding bit line 134 and acorresponding source line 136. Each TFT comprises a bit line 134, asource line 136, a word line 112, and the regions of the semiconductorstrip 116 and the ferroelectric strip 114 intersecting the word line112. Each dielectric plug 132 is disposed between a bit line 134 of aTFT and a source line 136 of another TFT. In other words, a bit line 134and a source line 136 are disposed at opposing sides of each of thedielectric plugs 132. Thus, each dielectric plug 132 physically andelectrically separates adjacent TFTs.

As an example to form the bit lines 134 and the source lines 136,openings for the bit lines 134 and the source lines 136 can be formedthrough the dielectric layers 118. The openings may be formed usingacceptable photolithography and etching techniques. Specifically, theopenings are formed on opposing sides of the dielectric plugs 132. Oneor more conductive material(s), e.g., a glue layer and a bulk conductivematerial, are then formed in the openings. Acceptable conductivematerials include metals such as tungsten, cobalt, aluminum, nickel,copper, silver, gold, alloys thereof, or the like. The conductivematerial(s) may be formed by an acceptable deposition process such asALD or CVD, an acceptable plating process such as electroplating orelectroless plating, or the like. In some embodiments, tungsten isdeposited in the openings. A planarization process is then applied tothe various layers to remove excess conductive material(s) over thetopmost first dielectric layer 104A. The planarization process may be achemical mechanical polish (CMP), an etch-back process, combinationsthereof, or the like. The remaining conductive material(s) form the bitlines 134 and the source lines 136 in the openings.

In FIGS. 15A and 15B, an interconnect structure 140 is formed over theintermediate structure. Only some features of the interconnect structure140 are shown in FIG. 15A, for clarity of illustration. The interconnectstructure 140 may include, e.g., metallization patterns 142 in adielectric material 144. The dielectric material 144 may include one ormore dielectric layers, such as one or more layers of a low-k (LK) or anextra low-K (ELK) dielectric material. The metallization patterns 142may be metal interconnects (e.g., metal lines and vias) formed in theone or more dielectric layers. The interconnect structure 140 may beformed by a damascene process, such as a single damascene process, adual damascene process, or the like.

The metallization patterns 142 of the interconnect structure 140 areelectrically coupled to the bit lines 134 and the source lines 136. Forexample, the metallization patterns 142 include bit line interconnects142B (which are electrically coupled to the bit lines 134) and sourceline interconnects 142S (which are electrically coupled to the sourcelines 136). The adjacent bit lines 134 are connected to different bitline interconnects 142B, which helps avoid shorting of the adjacent bitlines 134 when their common word line 112 is activated. Similarly, theadjacent source lines 136 are connected to different source lineinterconnects 142S, which helps avoid shorting of the adjacent sourcelines 136 when their common word line 112 is activated.

In this embodiment, the bit lines 134 and the source lines 136 areformed in a staggered layout, where adjacent bit lines 134 and adjacentsource lines 136 are laterally offset from one another along the firstdirection D₁ (see FIG. 2B). Thus, each word line 112 is laterallydisposed between a dielectric plug 132 and one of a bit line 134 or asource line 136. The bit line interconnects 142B and the source lineinterconnects 142S each extend along the second direction D₂ (see FIG.2B), e.g., along the columns of the memory array 52. The bit lineinterconnects 142B are connected to alternating ones of the bit lines134 along the columns of the memory array 52. The source lineinterconnects 142S are connected to alternating ones of the source lines136 along the columns of the memory array 52. Laterally offsetting thebit lines 134 and the source lines 136 obviates the need for lateralinterconnects along the columns of the memory array 52, thus allowingthe bit line interconnects 142B and the source line interconnects 142Sto be straight conductive segments that can be formed at a lowest levelof the interconnect structure 140. In another embodiment (discussedbelow), the bit lines 134 and the source lines 136 are not formed in astaggered layout, and instead lateral interconnection is accomplished inthe interconnect structure 140.

FIGS. 16A and 16B are various views of a memory array 52, in accordancewith some other embodiments. A portion of the memory array 52 isillustrated. Some features, such as the staircase arrangement of theword lines (see FIG. 2B), are not shown for clarity of illustration.FIG. 16A is a three-dimensional view of the memory array 52, and FIG.16B is a cross-sectional view showing a similar cross-section asreference cross-section B-B in FIG. 13A.

In this embodiment, the ferroelectric strips 114 are omitted and arereplaced with a plurality of dielectric layers 150, which are datastorage strips, thereby turning the memory cell into a flash likestorage element, permitting the creation of, e.g., a NOR flash array.Specifically, first dielectric layers 150A are formed on the substrate102 and in contact with the sidewalls of the word lines 112. Seconddielectric layers 150B are formed on the first dielectric layers 150A.Third dielectric layers 150C are formed on the second dielectric layers150B. The first dielectric layers 150A, the second dielectric layers150B, and the third dielectric layers 150C are each formed of dielectricmaterials. Acceptable dielectric materials include oxides such assilicon oxide; nitrides such as silicon nitride; carbides such assilicon carbide; the like; or combinations thereof such as siliconoxynitride, silicon oxycarbide, silicon carbonitride, or the like. Insome embodiments, the first dielectric layers 150A and the thirddielectric layers 150C are formed of a first dielectric material (e.g.,an oxide such as silicon oxide) and the second dielectric layers 150Bare formed of a different second dielectric material (e.g., a nitridesuch as silicon nitride). The dielectric material(s) may be formed by anacceptable deposition process such as ALD, CVD, or the like. Forexample, the first dielectric layers 150A, the second dielectric layers150B, and the third dielectric layers 150C may be formed by acombination of deposition, etching, and planarization, in a similarmanner as that discussed above with respect to the ferroelectric strips114.

FIGS. 17A and 17B are various views of a memory array 52, in accordancewith some other embodiments. A portion of the memory array 52 isillustrated. Some features, such as the staircase arrangement of theword lines (see FIG. 2B), are not shown for clarity of illustration.FIG. 17A is a three-dimensional view of the memory array 52, and FIG.17B is a cross-sectional view showing a similar cross-section asreference cross-section B-B in FIG. 13A.

In this embodiment, conductive strips 160 are formed between theferroelectric strips 114 and the semiconductor strips 116. Formation ofthe conductive strips 160 helps avoid or reduce formation of aninterlayer oxide on the ferroelectric strips 114 during formation of thesemiconductor strips 116. Avoiding or reducing formation of theinterlayer oxide can increase the life span of the memory array 52.

The conductive strips 160 may be formed of a metal such as ruthenium,tungsten, titanium nitride, tantalum nitride, molybdenum, or the like.The conductive material(s) of the conductive strips 160 may be formed byan acceptable deposition process such as ALD or CVD, an acceptableplating process such as electroplating or electroless plating, or thelike. A thickness of the conductive strips 160 can be in the range ofabout 1 nm to about 20 nm. The conductive strips 160 can be formed in asimilar manner as the semiconductor strips 116, and can be formed duringthe formation of the semiconductor strips 116. The dielectric plugs 132may (or may not) not be formed through the conductive strips 160.

FIGS. 18A and 18B are various views of a memory array 52, in accordancewith some other embodiments. A portion of the memory array 52 isillustrated. Some features, such as the staircase arrangement of theword lines (see FIG. 2B), are not shown for clarity of illustration.FIG. 18A is a three-dimensional view of the memory array 52, and FIG.18B is a cross-sectional view showing a similar cross-section asreference cross-section B-B in FIG. 13A.

In this embodiment, the glue layers 112A_(G) and the glue layers112B_(G) are formed of different materials in order to help lower theoverall resistivity. For example, the glue layers 112A_(G) can be formedof a first glue material (e.g., titanium nitride) and the glue layers112B_(G) can be formed of a second glue material (e.g., tantalumnitride) that has a different resistivity. As such, the glue layers112A_(G) and the glue layers 112B_(G) may not merge during formationsuch that they are separate and distinct from each another.

FIGS. 19A and 19B are various views of a memory array 52, in accordancewith some other embodiments. A portion of the memory array 52 isillustrated. Some features, such as the staircase arrangement of theword lines (see FIG. 2B), are not shown for clarity of illustration.FIG. 19A is a three-dimensional view of the memory array 52, and FIG.19B is a cross-sectional view shown along reference cross-section B-B inFIG. 19A.

In this embodiment, the metallization patterns 142 of the interconnectstructure 140 only include source line interconnects 142S. Anotherinterconnect structure 170 is formed at an opposite side of thesubstrate 102 from the interconnect structure 140. The interconnectstructure 170 may be formed in a similar manner as the interconnectstructure 140. The interconnect structure 170 may include, e.g.,metallization patterns 172 in a dielectric material 174. Conductive vias180 can be formed through the substrate 102 and the ferroelectric strips114 to electrically couple the metallization patterns 172 to the bitlines 134 and/or the source lines 136. For example, the metallizationpatterns 172 include bit line interconnects 172B (which are electricallycoupled to the source lines 136 by the conductive vias 180).

Further, in this embodiment, the bit lines 134 and the source lines 136are not formed in a staggered layout, and thus adjacent bit lines 134and adjacent source lines 136 are laterally aligned with one anotheralong the first direction D₁ (see FIG. 2B). Thus, each word line 112 islaterally disposed between a pair of bit lines 134 or a pair of sourcelines 136. Because the bit lines 134 and the source lines 136 are notformed in a staggered layout, lateral interconnection to a subset of thesource line interconnects 142S is accomplished in the interconnectstructure 140, and lateral interconnection to a subset of the bit lineinterconnects 172B is accomplished in the interconnect structure 170.For example, the source line interconnects 142S are straight conductivesegments that are formed at an intermediate level of the interconnectstructure 140. Lateral interconnects 146 between a first subset of thesource line interconnects 142S and the source lines 136 are formed at alower level of the interconnect structure 140 than the source lineinterconnects 142S. Straight interconnects 148 between a second subsetof the source line interconnects 142S and the source lines 136 areformed at a lower level of the interconnect structure 140 than thesource line interconnects 142S. Similarly, the bit line interconnects172B are straight conductive segments that are formed at an intermediatelevel of the interconnect structure 170. Lateral interconnects 176between a first subset of the bit line interconnects 172B and the bitlines 134 are formed at a lower level of the interconnect structure 170than the bit line interconnects 172B. Straight interconnects 178 betweena second subset of the bit line interconnects 172B and the bit lines 134are formed at a lower level of the interconnect structure 170 than thebit line interconnects 172B.

It should be appreciated that the layouts of the interconnect structures140, 170 may be flipped in other embodiments. For example, themetallization patterns 142 of the interconnect structure 140 can includebit line interconnects, and the metallization patterns 172 of theinterconnect structure 170 can include source line interconnects.

FIGS. 20A through 22B are various views of intermediate stages in themanufacturing of a memory array 52, in accordance with some otherembodiments. A portion of the memory array 52 is illustrated. Somefeatures, such as the staircase arrangement of the word lines (see FIG.2B), are not shown for clarity of illustration. FIGS. 20A and 21A arethree-dimensional views of the memory array 52. FIGS. 20B and 21B arecross-sectional views shown along reference cross-section B-B in FIG.21A. FIGS. 22A and 22B are top-down views of a portion of the memoryarray 52.

In FIGS. 20A and 20B, a structure similar to that described with respectto FIGS. 13A and 13B is obtained, however, the ferroelectric strips 114,the semiconductor strips 116, and the dielectric layers 118 are notformed at this step of processing. Instead, the first trenches 106 (seeFIGS. 4A and 4B) and the second trenches 120 (see FIGS. 8A and 8B) areeach filled with a dielectric layer 192. The dielectric layers 192 areformed of a dielectric material. Acceptable dielectric materials includeoxides such as silicon oxide; nitrides such as silicon nitride; carbidessuch as silicon carbide; the like; or combinations thereof such assilicon oxynitride, silicon oxycarbide, silicon carbonitride, or thelike. The dielectric material(s) may be formed by an acceptabledeposition process such as ALD, CVD, or the like. In some embodiments,silicon oxide is deposited in the first trenches 106 and the secondtrenches 120. Planarization processes may be applied to the variouslayers to remove excess dielectric materials over the topmost firstdielectric layer 104A. The planarization process may be a chemicalmechanical polish (CMP), an etch-back process, combinations thereof, orthe like. For example, a first planarization process can be performedafter the first trenches 106 are filled to form the dielectric layers192, and second planarization processes can be performed after thesecond trenches 120 are filled to form the dielectric layers 192.

In FIGS. 21A and 21B, TFT film stacks are formed extending through thedielectric layers 192. The TFT film stacks each include a ferroelectricstrip 114, a semiconductor strip 116, and a dielectric layer 118. Bitlines 134 and source lines 136 are then formed through at least thedielectric layers 118.

The ferroelectric strips 114, the semiconductor strips 116, and thedielectric layers 118 may be formed by a combination of deposition,etching, and planarization. For example, openings can be formed throughthe dielectric layers 192. The openings may be formed using acceptablephotolithography and etching techniques. A ferroelectric layer can beconformally deposited in the openings through the dielectric layers 192.A semiconductor layer can then be conformally deposited on theferroelectric layer. The semiconductor layer can then be anisotropicallyetched to remove horizontal portions of the semiconductor layer, thusexposing the ferroelectric layer. A dielectric layer can then beconformally deposited on the remaining vertical portions of thesemiconductor layer and the exposed portions of the ferroelectric layer.A planarization process is then applied to the various layers to removeexcess materials over the topmost first dielectric layer 104A. Theplanarization process may be a chemical mechanical polish (CMP), anetch-back process, combinations thereof, or the like. The portions ofthe ferroelectric layer, the semiconductor layer, and the dielectriclayer remaining in the openings through the dielectric layers 192 formthe ferroelectric strips 114, the semiconductor strips 116, and thedielectric layers 118, respectively. The planarization process exposesthe topmost first dielectric layer 104A such that top surfaces of thetopmost first dielectric layer 104A, the ferroelectric strips 114, thesemiconductor strips 116, and the dielectric layers 118 are coplanar(within process variations) after the planarization process.

As an example to form the bit lines 134 and the source lines 136,openings for the bit lines 134 and the source lines 136 can be formedthrough the dielectric layers 118, and optionally also the ferroelectricstrips 114 and the semiconductor strips 116. The openings may be formedusing acceptable photolithography and etching techniques. Specifically,the openings are formed so that they oppose the sides of the remainingportions of the dielectric layers 118. In some embodiments, the openingsonly extend through the dielectric layers 118, so that the bit lines 134and the source lines 136 only extend through the dielectric layers 118(as shown by FIG. 22A). In some embodiments, the openings also extendthrough the ferroelectric strips 114 and the semiconductor strips 116,so that the bit lines 134 and the source lines 136 also extend throughthe ferroelectric strips 114 and the semiconductor strips 116. One ormore conductive material(s) are then formed in the openings. Acceptableconductive materials include metals such as tungsten, cobalt, aluminum,nickel, copper, silver, gold, alloys thereof, or the like. Theconductive material(s) may be formed by an acceptable deposition processsuch as ALD or CVD, an acceptable plating process such as electroplatingor electroless plating, or the like. In some embodiments, tungsten isdeposited in the openings. A planarization process is then applied tothe various layers to remove excess conductive material(s) over thetopmost first dielectric layer 104A. The planarization process may be achemical mechanical polish (CMP), an etch-back process, combinationsthereof, or the like. The remaining conductive material(s) form the bitlines 134 and the source lines 136 in the openings. Interconnects maythen be formed over (or under) the bit lines 134 and the source lines136, using similar techniques as those discussed above, so that the bitlines 134 and the source lines 136 may be coupled to bit lineinterconnects and source lines interconnects, respectively.

By forming the first conductive features 112A and the second dielectricmaterial 122 prior to the etching of the second trenches 120 and theformation of the second sidewall recesses 124, the first conductivefeatures 112A and the second dielectric material 122 are present duringsubsequent etching processes such as the etching of the second trenches120 and the second sidewall recesses 124. As such, these unremovedstructures can provide structural support during the subsequentprocesses, helping to prevent problems such as word line wiggling oreven word line collapse. Avoidance of such problems allows for a smallerdevice to be manufactured with fewer defects, increasing the overallyield.

In accordance with an embodiment, a method of manufacturing asemiconductor device, the method including: etching a first trench in amultilayer stack, the multilayer stack comprising alternating dielectriclayers and sacrificial layers; depositing a first conductive materialwithin the first trench; filling a remainder of the first trench with afirst dielectric material; after the filling the remainder of the firsttrench, etching a second trench in the multilayer stack; depositing asecond conductive material within the second trench; filling a remainderof the second trench with a second dielectric material; etching thefirst conductive material and the second conductive material; and afterthe etching the first conductive material and the second conductivematerial, depositing a channel material into the first trench. In anembodiment the method further includes: planarizing the seconddielectric material with a portion of the dielectric layers after thefilling the remainder of the second trench; and removing the portion ofthe dielectric layers prior to the etching the first conductivematerial. In an embodiment the removing the portion of the dielectriclayers forms an “H”-shaped structure. In an embodiment the firstconductive material comprises a first glue layer and wherein thedepositing the second conductive material deposits a second glue layerin physical contact with the first glue layer. In an embodiment themethod further includes recessing the sacrificial layers prior to thedepositing the first conductive material. In an embodiment the methodfurther includes planarizing the first dielectric material and the firstconductive material prior to the etching the second trench. In anembodiment the method further includes depositing a ferroelectricmaterial into the first trench.

In accordance with another embodiment, a method of manufacturing asemiconductor device, the method including: forming an alternating stackof first dielectric materials and sacrificial materials; forming a firstportion of a first word line within the alternating stack, the formingthe first portion of a first word line including: etching a first trenchin the alternating stack; forming first recesses by recessing firstportions of the sacrificial material exposed within the first trench;depositing a first conductive material into the first recesses; anddepositing a second dielectric material to fill a remainder of the firsttrench; and forming a second portion of the first word line within thealternating stack, the forming the second portion of the first word lineincluding: etching a second trench in the alternating stack; formingsecond recesses by removing a second portion of the sacrificial materialexposed within the second trench; depositing a second conductivematerial into the second recesses; and depositing a third dielectricmaterial to fill a remainder of the second trench. In an embodiment themethod further includes removing a top layer of the first dielectricmaterials after the depositing the third dielectric material. In anembodiment the removing the top layer of the first dielectric materialsleaves a “U”-shaped opening, wherein sidewalls of the “U”-shaped openingcomprise the first conductive material and the second conductivematerial. In an embodiment the removing the second portion of thesacrificial material exposes a portion of the first conductive material.In an embodiment the method further includes planarizing the thirddielectric material after the depositing the third dielectric material.In an embodiment the third dielectric material is different from thesecond dielectric material. In an embodiment the method furtherincludes: removing the second dielectric material and the thirddielectric material; etching the first conductive material and thesecond conductive material; depositing a ferroelectric material adjacentto the first conductive material and the second conductive material; anddepositing a channel material adjacent to the ferroelectric material.

In accordance with yet another embodiment, a semiconductor deviceincludes: a ferroelectric material extending away from a substrate; achannel material located on a first side of the ferroelectric material;a first dielectric material extending away from a second side of theferroelectric material opposite the first side; a second dielectricmaterial extending away from the second side of the ferroelectricmaterial; a first conductive material extending away from the secondside of the ferroelectric material between the first dielectric materialand the second dielectric material, the first conductive materialcomprising a first bulk material and a first glue layer; and a secondconductive material extending away from the first conductive materialbetween the first dielectric material and the second dielectricmaterial, the second conductive material comprising a second bulkmaterial and a second glue layer, the second glue layer being inphysical contact with the first glue layer. In an embodiment thesemiconductor device further includes a second ferroelectric material inphysical contact with the second conductive material. In an embodimentthe semiconductor device further includes: a third dielectric materialextending away from the second side of the ferroelectric material; athird conductive material extending away from the second side of theferroelectric material between the third dielectric material and thesecond dielectric material, the third conductive material comprising athird bulk material and a third glue layer; and a fourth conductivematerial extending away from the third conductive material between thethird dielectric material and the second dielectric material, the fourthconductive material comprising a fourth bulk material and a fourth gluelayer, the fourth glue layer being in physical contact with the thirdglue layer. In an embodiment the first conductive material and thesecond conductive material collectively have a width of about 80 nm. Inan embodiment the first conductive material and the second conductivematerial form a word line of a memory cell. In an embodiment the memorycell is part of a three dimensional memory array.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: a firstU-shaped glue layer over a substrate; a second U-shaped glue layer overthe substrate, the first U-shaped glue layer in physical contact withthe second U-shaped glue layer; a first conductive material within thefirst U-shaped glue layer; a second conductive material within thesecond U-shaped glue layer; a first ferroelectric strip in physicalcontact with both the first U-shaped glue layer and the first conductivematerial; a conductive strip in physical contact with the firstferroelectric strip; and a semiconductor strip in physical contact withthe conductive strip.
 2. The method of claim 1, wherein the firstferroelectric strip is a U-shaped strip.
 3. The method of claim 1,wherein the first ferroelectric strip comprises hafnium zirconium oxide.4. The method of claim 1, further comprising: a third U-shaped gluelayer over the first U-shaped glue layer; and a third conductivematerial within the third U-shaped glue layer.
 5. The method of claim 5,further comprising: a fourth U-shaped glue layer over the secondU-shaped glue layer; and a fourth conductive material within the fourthU-shaped glue layer, wherein the fourth U-shaped glue layer is inphysical contact with the third U-shaped glue layer.
 6. The method ofclaim 5, wherein the first ferroelectric strip is in physical contactwith both the third U-shaped glue layer and the third conductivematerial.
 7. The method of claim 1, wherein the first ferroelectricstrip comprises zirconium oxide.
 8. A semiconductor device comprising: astack of dielectric materials; a first portion of a first word linewithin the stack of dielectric materials, the first portion of the firstword line comprising a first conductive material in a first recesswithin the stack of dielectric materials; a second portion of the firstword line within the stack of dielectric materials, the second portionof the first word line comprising a second conductive material in asecond recess within the stack of dielectric materials, wherein thefirst portion of the first word line is in physical contact with thesecond portion of the first word line; a first ferroelectric strip inphysical contact with the first portion of the first word line; and asemiconductor strip in physical contact with the first ferroelectricstrip.
 9. The method of claim 8, wherein the first portion of the firstword line comprises a first glue material and a first main material. 10.The method of claim 9, wherein the second portion of the first word linecomprises a second glue material and a second main material, wherein thesecond main material is separated from the first main material by boththe first glue material and the second glue material.
 11. The method ofclaim 8, further comprising: a first portion of a second word linewithin the stack of dielectric materials and overlying the first portionof the first word line, the first portion of the second word linecomprising a third conductive material in a third recess within thestack of dielectric materials; and a second portion of the second wordline within the stack of dielectric materials and overlying the secondportion of the first word line, the second portion of the second wordline comprising a fourth conductive material in a fourth recess withinthe stack of dielectric materials, the first portion of the second wordline being in physical contact with the second portion of the secondword line.
 12. The method of claim 8, wherein the first portion of thefirst word line and the second portion of the first word linecollectively have a width of about 80 nm.
 13. The method of claim 8,further comprising a first bit line in physical contact with thesemiconductor strip.
 14. The method of claim 8, wherein the first wordline and the first bit line are part of a three-dimensional memoryarray.
 15. A semiconductor device comprising: a ferroelectric materialextending away from a substrate; a channel material located on a firstside of the ferroelectric material; a first dielectric materialextending away from a second side of the ferroelectric material oppositethe first side; a second dielectric material extending away from thesecond side of the ferroelectric material; a first conductive materialextending away from the second side of the ferroelectric materialbetween the first dielectric material and the second dielectricmaterial, the first conductive material comprising a first bulk materialand a first glue layer; and a second conductive material extending awayfrom the first conductive material between the first dielectric materialand the second dielectric material, the second conductive materialcomprising a second bulk material and a second glue layer, the secondglue layer being in physical contact with the first glue layer.
 16. Thesemiconductor device of claim 15, further comprising a secondferroelectric material in physical contact with the second conductivematerial.
 17. The semiconductor device of claim 15, further comprising:a third dielectric material extending away from the second side of theferroelectric material; a third conductive material extending away fromthe second side of the ferroelectric material between the thirddielectric material and the second dielectric material, the secondconductive material comprising a third bulk material and a third gluelayer; and a fourth conductive material extending away from the thirdconductive material between the third dielectric material and the seconddielectric material, the fourth conductive material comprising a fourthbulk material and a fourth glue layer, the fourth glue layer being inphysical contact with the third glue layer.
 18. The semiconductor deviceof claim 15, wherein the first conductive material and the secondconductive material collectively have a width of about 80 nm.
 19. Thesemiconductor device of claim 15, wherein the first conductive materialand the second conductive material form a word line of a memory cell.20. The semiconductor device of claim 19, wherein the memory cell ispart of a three dimensional memory array.